Atomically thin molybdenum disulfide films on large-area substrates

Researchers from the Moscow Institute of Physics and Technology have managed to grow atomically thin films of molybdenum disulfide (MoS2) spanning up to several tens of centimeters square.

The optimal width of the bandgap in molybdenum disulfide (MoS2) makes it suitable for use in electronic devices.

The method we came up with to synthesize MoS2 involves two steps. First, a film of MoO3 is grown using the atomic layer deposition technique, which offers precise atomic layer thickness and allows conformal coating of all surfaces. And MoO3 can easily be obtained on wafers of up to 300 millimeters in diameter. Next, the film is heat-treated in sulfur vapor. As a result, the oxygen atoms in MoO3 are replaced by sulfur atoms, and MoS2 is formed. The team has already learned to grow atomically thin MoS2 films on an area of up to several tens of square centimeters,

It was demonstrated that the material’s structure can be modified by varying the synthesis temperature. The films, which are important to electronics and optoelectronics, were obtained at 900-1,000° Celsius.

The findings were published in the journal ACS Applied Nano Materials. (

Read more.